for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 106 linear & power amplifiers - smt parameter min. typ. max. min. typ. max. units frequency range 17.5 - 21.0 21.0 - 24.0 ghz gain 10.5 13 10.5 14 db gain variation over temperature 0.02 0.03 0.02 0.03 db/ c input return loss 10 10 db output return loss 7 8 db output power for 1 db compression (p1db) 17 20 18.5 21.5 dbm saturated output power (psat) 23 23.5 dbm output third order intercept (ip3) 28 27 dbm noise figure 76.5db supply current (idd)(vdd = 5v, vgg = -1v typ.) 85 85 ma hmc442lm1 general description features functional diagram the hmc442lm1 is a broadband 17.5 to 24 ghz gaas phemt mmic medium power ampli er in a smt leadless chip carrier package. the lm1 is a true surface mount broadband millimeterwave package offering low loss & excellent i/o match, preserving mmic chip performance. the ampli er provides 14 db of gain and +23 dbm of saturated power at 27% pae from a +5v supply voltage. this 50 ohm matched ampli er has integrated dc blocks on rf in and out and makes an ideal linear gain block, transmit chain driver or lo driver for hmc smt mixers. as an alternative to chip-and-wire hybrid assem- blies the hmc442lm1 eliminates the need for wirebonding, thereby providing a consistent con- nection interface for the customer. saturated power: +23 dbm @ 27% pae gain: 14 db supply voltage: +5v 50 ohm matched input/output electrical speci cations, t a = +25 c, vdd = 5v, idd = 85 ma* typical applications the hmc442lm1 is an ideal gain block or driver ampli er for: ? point-to-point radios ? point-to-multi-point radios ? vsat *adjust vgg between -1.5 to -0.5v to achieve idd = 85 ma typical. gaas phemt mmic medium power amplifier, 17.5 - 24.0 ghz v01.0807
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 107 psat vs. temperature output return loss vs. temperature input return loss vs. temperature broadband gain & return loss p1db vs. temperature gain vs. temperature 0 4 8 12 16 20 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -40 c gain (db) frequency (ghz) -20 -10 0 10 20 14 17 20 23 26 29 s21 s11 s22 response(db) frequency (ghz) -20 -15 -10 -5 0 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -40 c return loss (db) frequency (ghz) -20 -15 -10 -5 0 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -40 c return loss (db) frequency (ghz) 10 14 18 22 26 30 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -40 c psat (dbm) frequency (ghz) 10 14 18 22 26 30 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -40 c p1db (dbm) frequency (ghz) hmc442lm1 gaas phemt mmic medium power amplifier, 17.5 - 24.0 ghz v01.0807
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 108 linear & power amplifiers - smt power compression @ 18 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage @ 23 ghz reverse isolation vs. temperature power compression @ 23 ghz 0 4 8 12 16 20 24 28 32 -10 -6 -2 2 6 10 14 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 5 10 15 20 25 30 -10 -6 -2 2 6 10 14 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 2 4 6 8 10 16 18 20 22 24 26 + 25c +85 c -40 c noise figure (db) frequency (ghz) 14 18 22 26 30 34 16 18 20 22 24 26 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) -60 -50 -40 -30 -20 -10 0 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -40 c isolation (db) frequency (ghz) 10 12 14 16 18 20 22 24 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db psat gain (db), p1db (dbm), psat (dbm) vdd supply voltage (vdc) hmc442lm1 gaas phemt mmic medium power amplifier, 17.5 - 24.0 ghz v01.0807
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 109 outline drawing absolute maximum ratings drain bias voltage (vdd) +5.5 vdc gate bias voltage (vgg) -8.0 to 0 vdc rf input power (rfin)(vdd = +5vdc, idd = 85 ma) +16 dbm channel temperature 175 c continuous pdiss (t = 85 c) (derate 5.46 mw/c above 85 c) 0.491 w thermal resistance (channel to ground paddle) 183 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c vdd (v) idd (ma) +4.5 82 +5.0 85 +5.5 87 +2.7 79 +3.0 83 +3.3 86 note: ampli er will operate over full voltage range shown above typical supply current vs. vdd notes: 1. material: plastic 2. plating: gold over nickel 3. dimensions are in inches [millimeters]. 4. all tolerances are 0.005 [0.13]. 5. all grounds must be soldered to pcb rf ground. 6. ? indicates pin 1. hmc442lm1 gaas phemt mmic medium power amplifier, 17.5 - 24.0 ghz v01.0807 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 110 linear & power amplifiers - smt pin descriptions pin number function description interface schematic 1, 3, 5, 6 n/c no connection 2vdd power supply voltage for the ampli er. external bypass capacitors of 100 pf and 0.01 f are required. 4rfout this pin is ac coupled and matched to 50 ohms. 7vgg gate control for ampli er. adjust to achieve id of 85 ma. please follow mmic ampli er biasing procedure application note. 8rfin this pin is ac coupled and matched to 50 ohms. hmc442lm1 gaas phemt mmic medium power amplifier, 17.5 - 24.0 ghz v01.0807
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 111 evaluation pcb the grounded co-planar wave guide (cpwg) pcb input/output transitions allow use of ground-signal-ground (gsg) probes for testing. suggested probe pitch is 400um (16 mils). alternatively, the board can be mounted in a metal housing with 2.4mm coaxial connectors. evaluation circuit board layout design details layout technique micro strip to cpwg material rogers 4003 with 1/2 oz, cu dielectric thickness 0.008 (0.20 mm) microstrip line width 0.018 (0.46 mm) cpwg line width 0.016 (0.41 mm) cpwg line to gnd gap 0.005 (0.13 mm) ground via hole diameter 0.008 (0.20 mm) c1 - c2 100 pf capacitor, 0402 pkg. c3 - c4 33.000 pf capacitor, 0805 pkg. hmc442lm1 gaas phemt mmic medium power amplifier, 17.5 - 24.0 ghz v01.0807
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 112 linear & power amplifiers - smt suggested lm1 pcb land pattern tolerance: 0.003 ( 0.08 mm) ampli er application circuit hmc442lm1 gaas phemt mmic medium power amplifier, 17.5 - 24.0 ghz v01.0807
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 113 recommended smt attachment technique preparation & handling of the lm1 microwave package for surface mounting the hmc lm1 package was designed to be compatible with high volume surface mount pcb assembly processes. the lm1 package requires a speci c mounting pattern to allow proper mechanical attachment and to optimize electrical performance at millimeterwave frequencies. this pcb layout pattern can be found on each lm1 product data sheet. it can also be provided as an electronic drawing upon request from hittite sales & application engineering. follow these precautions to avoid permanent damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. lm1 devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc & ground contact areas. static sensitivity: follow esd precautions to protect against esd strikes. general handling: handle the lm1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoiding damaging the rf, dc, & ground contacts on the package bottom. do not apply excess pressure to the top of the lid. solder materials & temperature pro le: follow the information contained in the application note. hand soldering is not recomm ended. conductive epoxy attachment is not recommended. solder paste: solder paste should be selected based on the users experience and be compatible with the metallization systems used. see the lm1 data sheet outline drawing for pin & ground contact metallization schemes. solder paste application: solder paste is generally applied to the pcb using either a stencil printer or dot placement. the v olume of solder paste will be dependent on pcb and component layout and should be controlled to ensure consistent mechanical & electrica l performance. excess solder may create unwanted electrical parasitics at high frequencies. solder re ow: the soldering process is usually accomplished in a re ow oven but may also use a vapor phase process. a solde r re ow pro le is suggested above. prior to re owing product, temperature pro les should be measured using the same mass as the actual assemblies. the thermocou ple should be moved to various positions on the board to account for edge and corner effects and varying component masses. the na l pro le should be determined by mounting the thermocouple to the pcb at the location of the device. follow solder paste and oven vendors recommendations when developing a solder re ow pro le. a standard pro le will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. allow enough time between reaching pre-heat temperature and re ow for the solvent in the paste to evaporate and the ux to completely activate. re ow must then occur prior to the ux being completely driven off. the duration of peak re ow temperature should not excee d 15 seconds. packages have been quali ed to withstand a peak temperature of 235c for 15 seconds. verify that the pro le will not expose device to temperatures in excess of 235c. cleaning: a water-based ux wash may be used. 25 50 75 100 125 150 175 200 225 012345678 temperature ( 0 c) time (min) hmc442lm1 gaas phemt mmic medium power amplifier, 17.5 - 24.0 ghz v01.0807
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